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DMN60H080DS-13 - ONSEMI BAS40LT1G

DMN60H080DS-13

Active
Diodes Inc

MOSFET, N-CH, 600V, 0.07A, SOT-23 ROHS COMPLIANT: YES

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DMN60H080DS-13 - ONSEMI BAS40LT1G

DMN60H080DS-13

Active
Diodes Inc

MOSFET, N-CH, 600V, 0.07A, SOT-23 ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN60H080DS-13
Current - Continuous Drain (Id) @ 25°C80 mA
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]1.7 nC
Input Capacitance (Ciss) (Max) @ Vds25 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)1.1 W
Rds On (Max) @ Id, Vgs100 Ohm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.37
10$ 0.26
100$ 0.13
500$ 0.12
1000$ 0.09
2000$ 0.08
5000$ 0.08
Digi-Reel® 1$ 0.37
10$ 0.26
100$ 0.13
500$ 0.12
1000$ 0.09
2000$ 0.08
5000$ 0.08
Tape & Reel (TR) 10000$ 0.07
30000$ 0.07
50000$ 0.06
100000$ 0.06
NewarkEach (Supplied on Cut Tape) 1$ 0.30
10$ 0.20
25$ 0.17
50$ 0.14
100$ 0.10
250$ 0.10
500$ 0.09
1000$ 0.09

Description

General part information

DMN60H3D5SK3 Series

This new generation uses advanced planar technology MOSFET, provides excellent high voltage and fast switching, making it ideal for small-signal and level shift applications.