DMN60H3D5SK3 Series

600V N-CHANNEL ENHANCEMENT MODE MOSFET

Catalog

600V N-CHANNEL ENHANCEMENT MODE MOSFET

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Supplier Device Package	Power Dissipation (Max)
Diodes Inc DMN60H3D5SK3-13	4 V	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 V	Surface Mount	12.6 nC	N-Channel	MOSFET (Metal Oxide)	3.5 Ohm	-55 °C	150 °C	2.8 A	600 V	354 pF	41 W	TO-252 (DPAK)
Diodes Inc DMN60H80DHFF-7
Diodes Inc DMN60H080DS-13	3 V	4.5 V 10 V	SC-59 SOT-23-3 TO-236-3	20 V	Surface Mount	1.7 nC	N-Channel	MOSFET (Metal Oxide)	100 Ohm	-55 °C	150 °C	80 mA	600 V	25 pF		SOT-23-3	1.1 W
Diodes Inc DMN60H080DS-7	3 V	4.5 V 10 V	SC-59 SOT-23-3 TO-236-3	20 V	Surface Mount	1.7 nC	N-Channel	MOSFET (Metal Oxide)	100 Ohm	-55 °C	150 °C	80 mA	600 V	25 pF		SOT-23-3	1.1 W

Catalog

600V N-CHANNEL ENHANCEMENT MODE MOSFET

Key Features

• Low Input Capacitance

• High BVDSSRating for Power Application

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This new generation uses advanced planar technology MOSFET, provides excellent high voltage and fast switching, making it ideal for small-signal and level shift applications.