SSM3J304T(TE85L,F)

Obsolete

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 2.3A TSM

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Obsolete

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 2.3A TSM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J304T(TE85L,F)

Current - Continuous Drain (Id) @ 25°C	2.3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.8 V, 4 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	6.1 nC
Input Capacitance (Ciss) (Max) @ Vds	335 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	700 mW
Rds On (Max) @ Id, Vgs	127 mOhm
Supplier Device Package	TSM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	Supplier Device Package	Mounting Type	Operating Temperature
Toshiba Semiconductor and Storage SSM3J304T(TE85L,F)	P-Channel	335 pF	1.8 V 4 V	MOSFET (Metal Oxide)	6.1 nC	700 mW	2.3 A	20 V	127 mOhm	SC-59 SOT-23-3 TO-236-3	8 V	TSM	Surface Mount	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 2.3A (Ta) 700mW (Ta) Surface Mount TSM

Technical documentation and resources

No documents available