Beta
⌘K
MOSFET P-CH 20V 2.3A TSM
| Part | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Technology | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Package / Case | Vgs (Max) | Supplier Device Package | Mounting Type | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | P-Channel | 335 pF | 1.8 V 4 V | MOSFET (Metal Oxide) | 6.1 nC | 700 mW | 2.3 A | 20 V | 127 mOhm | SC-59 SOT-23-3 TO-236-3 | 8 V | TSM | Surface Mount | 150 °C |