2SC4793,TOA1F(J

Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 230V 1A TO220NIS

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Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 230V 1A TO220NIS

Technical Specifications

Parameters and characteristics for this part

Specification	2SC4793,TOA1F(J

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	2 W
Supplier Device Package	TO-220NIS
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max)	230 V

Part	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Frequency - Transition	Mounting Type	Current - Collector (Ic) (Max) [Max]	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Package / Case	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)
Toshiba Semiconductor and Storage 2SC4793(LBSAN,F,M)	1 µA	TO-220NIS	100 MHz	Through Hole	1 A	150 °C	100 hFE	NPN	TO-220-3 Full Pack	2 W	1.5 V	230 V
Toshiba Semiconductor and Storage 2SC4793(F,M)	1 µA	TO-220NIS	100 MHz	Through Hole	1 A	150 °C	100 hFE	NPN	TO-220-3 Full Pack	2 W	1.5 V	230 V
Toshiba Semiconductor and Storage 2SC4793,F(J	1 µA	TO-220NIS	100 MHz	Through Hole	1 A	150 °C	100 hFE	NPN	TO-220-3 Full Pack	2 W	1.5 V	230 V
Toshiba Semiconductor and Storage 2SC4793,YHF(J	1 µA	TO-220NIS	100 MHz	Through Hole	1 A	150 °C	100 hFE	NPN	TO-220-3 Full Pack	2 W	1.5 V	230 V
Toshiba Semiconductor and Storage 2SC4793,TOA1F(J	1 µA	TO-220NIS	100 MHz	Through Hole	1 A	150 °C	100 hFE	NPN	TO-220-3 Full Pack	2 W	1.5 V	230 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 230 V 1 A 100MHz 2 W Through Hole TO-220NIS

Technical documentation and resources