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2SC4793,F(J - TO-220AB Full Pack

2SC4793,F(J

Obsolete
Toshiba Semiconductor and Storage

TRANS NPN 230V 1A TO220NIS

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2SC4793,F(J - TO-220AB Full Pack

2SC4793,F(J

Obsolete
Toshiba Semiconductor and Storage

TRANS NPN 230V 1A TO220NIS

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification2SC4793,F(J
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100 hFE
Frequency - Transition100 MHz
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3 Full Pack
Power - Max [Max]2 W
Supplier Device PackageTO-220NIS
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.5 V
Voltage - Collector Emitter Breakdown (Max)230 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

2SC4793 Series

Bipolar (BJT) Transistor NPN 230 V 1 A 100MHz 2 W Through Hole TO-220NIS

Documents

Technical documentation and resources