DMT3022UEV-7
ActiveDiodes Inc
30V 17A 1.8W 28MΩ@4.5V,7A 1.8V@250UA 2 N-CHANNEL POWERDI3333-8(TYPEUXD) MOSFETS ROHS
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DMT3022UEV-7
ActiveDiodes Inc
30V 17A 1.8W 28MΩ@4.5V,7A 1.8V@250UA 2 N-CHANNEL POWERDI3333-8(TYPEUXD) MOSFETS ROHS
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMT3022UEV-7 |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 17 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.9 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 903 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power - Max [Max] | 900 mW |
| Rds On (Max) @ Id, Vgs | 22 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
DMT3022UEV Series
This new generation MOSFET is designed to minimize the on-state resistance (RD1RD2), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources