DMT3022UEV Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Mounting Type
Diodes Inc DMT3022UEV-7	8-PowerVDFN	1.8 V	22 mOhm	-55 °C	150 °C	2 N-Channel (Dual)	17 A	MOSFET (Metal Oxide)	30 V	903 pF	13.9 nC	900 mW	Surface Mount

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• Ultra Low Gate Threshold Voltage

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Function

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

Description

This new generation MOSFET is designed to minimize the on-state resistance (RD1RD2), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.