IQE022N06LM5CGATMA1

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Infineon Technologies

OPTIMOS™ 5 SINGLE N-CHANNEL SOURCE-DOWN LOGIC LEVEL FET, 60 V 2.2 MOHM 151 A, IN A PQFN 3.3X3.3 CENTER-GATE PACKAGE

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IQE022N06LM5CGATMA1

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Infineon Technologies

OPTIMOS™ 5 SINGLE N-CHANNEL SOURCE-DOWN LOGIC LEVEL FET, 60 V 2.2 MOHM 151 A, IN A PQFN 3.3X3.3 CENTER-GATE PACKAGE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IQE022N06LM5CGATMA1

Current - Continuous Drain (Id) @ 25°C	151 A, 24 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds	4420 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	9-PowerTDFN
Power Dissipation (Max)	2.5 W, 100 W
Rds On (Max) @ Id, Vgs	2.2 mOhm
Supplier Device Package	PG-TTFN-9-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

IQE022 Series

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Technology	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)
Infineon Technologies IQE022N06LM5CGATMA1	60 V	PG-TTFN-9-3	20 V	24 A 151 A	2.2 mOhm	2.5 W 100 W	-55 °C	175 ░C	53 nC	9-PowerTDFN	4420 pF	MOSFET (Metal Oxide)	N-Channel	2.3 V	Surface Mount	4.5 V 10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.99
		10	$ 2.12
		100	$ 1.48
		500	$ 1.28
	Digi-Reel®	1	$ 2.99
		10	$ 2.12
		100	$ 1.48
		500	$ 1.28
	Tape & Reel (TR)	5000	$ 1.04

Description

General part information

IQE022 Series

IQE022N06LM5CG is Infineon’s new best-in-classOptiMOS™ 5Power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate (CG) package, offering the industry’s lowest on-state resistance RDS(on)at 25˚C, superior thermal performance, and optimized parallelization. TheOptiMOS™ Source-Downis a revolutionary technology with a flipped silicon die inside, offering several advantages such as better thermal capability, higher power density and improved layout possibilities. Combined with the newPQFN 3.3x3.3Center-Gate package, IQE022N06LM5CG is targeted for high power density and performanceSMPSproducts commonly found intelecomand data servers.

Documents

Technical documentation and resources