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OPTIMOS™ 5 SINGLE N-CHANNEL SOURCE-DOWN LOGIC LEVEL FET, 60 V 2.2 MOHM 151 A, IN A PQFN 3.3X3.3 CENTER-GATE PACKAGE
| Part | Drain to Source Voltage (Vdss) | Supplier Device Package | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Technology | FET Type | Vgs(th) (Max) @ Id | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 60 V | PG-TTFN-9-3 | 20 V | 24 A 151 A | 2.2 mOhm | 2.5 W 100 W | -55 °C | 175 ░C | 53 nC | 9-PowerTDFN | 4420 pF | MOSFET (Metal Oxide) | N-Channel | 2.3 V | Surface Mount | 4.5 V 10 V |