Technical Specifications
Parameters and characteristics for this part
| Specification | STP40NF10L |
|---|---|
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 10 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 64 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 150 W |
| Rds On (Max) @ Id, Vgs | 33 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 17 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.68 | |
| 50 | $ 2.15 | |||
| 100 | $ 1.77 | |||
| 500 | $ 1.50 | |||
| 1000 | $ 1.27 | |||
| 2000 | $ 1.21 | |||
| 5000 | $ 1.16 | |||
Description
General part information
STP40N60M2 Series
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.
Documents
Technical documentation and resources
Datasheet
DatasheetDatasheet
DatasheetFlyers (5 of 6)
AN4390
Application NotesFlyers (5 of 6)
UM1575
User ManualsAN3267
Application NotesAN4337
Application NotesTN1225
Technical Notes & ArticlesTN1224
Technical Notes & ArticlesDS2838
Product SpecificationsAN4191
Application NotesFlyers (5 of 6)
Flyers (5 of 6)
Flyers (5 of 6)
Flyers (5 of 6)
