Technical Specifications
Parameters and characteristics for this part
| Specification | STP40N60M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 34 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2500 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 250 W |
| Rds On (Max) @ Id, Vgs | 88 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STP40N60M2 Series
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.
Documents
Technical documentation and resources
Flyers (5 of 10)
AN2344
Application Notes (5 of 9)AN4406
Application Notes (5 of 9)Flyers (5 of 10)
AN2842
Application Notes (5 of 9)Flyers (5 of 10)
TN1156
Technical Notes & ArticlesTN1225
Technical Notes & ArticlesUM1575
User ManualsAN4720
Application Notes (5 of 9)Flyers (5 of 10)
Flyers (5 of 10)
Flyers (5 of 10)
TN1378
Technical Notes & ArticlesAN4250
Application Notes (5 of 9)Flyers (5 of 10)
Flyers (5 of 10)
TN1224
Technical Notes & ArticlesDS9801
Product SpecificationsAN4829
Application Notes (5 of 9)AN4742
Application Notes (5 of 9)AN5318
Application Notes (5 of 9)Flyers (5 of 10)
AN4337
Application Notes (5 of 9)Flyers (5 of 10)
