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SCTWA90N65G2V-4 - TO-247-4

SCTWA90N65G2V-4

Active
STMicroelectronics

SILICON CARBIDE POWER MOSFET 650 V, 18 MOHM TYP., 119 A IN AN HIP247-4 PACKAGE

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DocumentsDatasheetDatasheet+28
SCTWA90N65G2V-4 - TO-247-4

SCTWA90N65G2V-4

Active
STMicroelectronics

SILICON CARBIDE POWER MOSFET 650 V, 18 MOHM TYP., 119 A IN AN HIP247-4 PACKAGE

Deep-Dive with AI

DocumentsDatasheetDatasheet+28

Technical Specifications

Parameters and characteristics for this part

SpecificationSCTWA90N65G2V-4
Current - Continuous Drain (Id) @ 25°C119 A
Drain to Source Voltage (Vdss)650 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]157 nC
Input Capacitance (Ciss) (Max) @ Vds3380 pF
Mounting TypeThrough Hole
Operating Temperature [Max]200 C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)565 W
Rds On (Max) @ Id, Vgs24 mOhm
Supplier Device PackageHiP247™ Long Leads
Vgs (Max) [Max]22 V
Vgs (Max) [Min]-10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 600$ 23.25
NewarkEach 1$ 36.53
5$ 35.64
10$ 34.78
25$ 34.01
50$ 33.55
100$ 33.54

Description

General part information

SCTWA90N65G2V-4 Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.