SCTWA90N65G2V-4 Series

Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package

Catalog

Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max) [Min]	Vgs (Max) [Max]	Drain to Source Voltage (Vdss)
STMicroelectronics SCTWA90N65G2V-4	TO-247-3	3380 pF	119 A	N-Channel	HiP247™ Long Leads	565 W	Through Hole	157 nC	-55 °C	200 C	24 mOhm	-10 V	22 V	650 V

Catalog

Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.