IPA60R170CFD7XKSA1

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Infineon Technologies

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 FULLPAK PACKAGE; 170 MOHM; FAST RECOVERY DIODE

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IPA60R170CFD7XKSA1

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Infineon Technologies

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 FULLPAK PACKAGE; 170 MOHM; FAST RECOVERY DIODE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPA60R170CFD7XKSA1

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Input Capacitance (Ciss) (Max) @ Vds	1199 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	26 W
Rds On (Max) @ Id, Vgs	170 mOhm
Supplier Device Package	PG-TO220-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPA60R Series

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IPA60R600CPXKSA1	20 V	600 V	550 pF	10 V	28 W	TO-220-3 Full Pack	6.1 A	600 mOhm	3.5 V	Through Hole	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	27 nC
Infineon Technologies IPA60R125C6E8191XKSA1
Infineon Technologies IPA60R170CFD7XKSA1	20 V	650 V		10 V		TO-220-3 Full Pack	8 A	170 mOhm	4.5 V	Through Hole	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	28 nC	PG-TO220-FP	1199 pF	26 W
Infineon Technologies IPA60R160P6XKSA1	20 V	600 V		10 V		TO-220-3 Full Pack	23.8 A	160 mOhm	4.5 V	Through Hole	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	44 nC	PG-TO220-FP	2080 pF	34 W
Infineon Technologies IPA60R190C6XKSA1	20 V	600 V	1400 pF	10 V		TO-220-3 Full Pack	20.2 A	190 mOhm		Through Hole	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	63 nC	PG-TO220-FP		34 W	3.5 V
Infineon Technologies IPA60R120C7XKSA1	20 V	600 V	1500 pF	10 V		TO-220-3 Full Pack	11 A	120 mOhm	4 V	Through Hole	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)		PG-TO220-FP		32 W		34 nC
Infineon Technologies IPA60R125CPXKSA1	20 V	650 V	2500 pF	10 V	35 W	TO-220-3 Full Pack	25 A	125 mOhm	3.5 V	Through Hole	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	70 nC	PG-TO220-FP
Infineon Technologies IPA60R120P7XKSA1	20 V	600 V	1544 pF	10 V	28 W	TO-220-3 Full Pack	26 A		4 V	Through Hole	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)		PG-TO220 Full Pack				36 nC	120 mOhm
Infineon Technologies IPA60R450E6XKSA1	20 V	600 V	620 pF	10 V		TO-220-3 Full Pack	9.2 A		3.5 V	Through Hole	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	28 nC	PG-TO220-FP
Infineon Technologies IPA60R330P6XKSA1	20 V	600 V		10 V		TO-220-3 Full Pack	12 A	330 mOhm		Through Hole	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	22 nC	PG-TO220-FP	1010 pF	32 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 3.63
		10	$ 2.38
		100	$ 1.66
		500	$ 1.36
		1000	$ 1.26
		2000	$ 1.23
Newark	Each	1	$ 3.83
		10	$ 2.43
		100	$ 2.27
		500	$ 1.83
		1000	$ 1.82

Description

General part information

IPA60R Series

The600V CoolMOS™ CFD7is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Documents

Technical documentation and resources