IPA60R190C6XKSA1

NRND

Infineon Technologies

POWER MOSFET, N CHANNEL, 650 V, 59 A, 0.17 OHM, TO-220FP, THROUGH HOLE

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IPA60R190C6XKSA1

NRND

Infineon Technologies

POWER MOSFET, N CHANNEL, 650 V, 59 A, 0.17 OHM, TO-220FP, THROUGH HOLE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPA60R190C6XKSA1

Current - Continuous Drain (Id) @ 25°C	20.2 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	63 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	34 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	PG-TO220-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	3.5 V

IPA60R Series

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IPA60R600CPXKSA1	20 V	600 V	550 pF	10 V	28 W	TO-220-3 Full Pack	6.1 A	600 mOhm	3.5 V	Through Hole	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	27 nC
Infineon Technologies IPA60R125C6E8191XKSA1
Infineon Technologies IPA60R170CFD7XKSA1	20 V	650 V		10 V		TO-220-3 Full Pack	8 A	170 mOhm	4.5 V	Through Hole	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	28 nC	PG-TO220-FP	1199 pF	26 W
Infineon Technologies IPA60R160P6XKSA1	20 V	600 V		10 V		TO-220-3 Full Pack	23.8 A	160 mOhm	4.5 V	Through Hole	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	44 nC	PG-TO220-FP	2080 pF	34 W
Infineon Technologies IPA60R190C6XKSA1	20 V	600 V	1400 pF	10 V		TO-220-3 Full Pack	20.2 A	190 mOhm		Through Hole	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	63 nC	PG-TO220-FP		34 W	3.5 V
Infineon Technologies IPA60R120C7XKSA1	20 V	600 V	1500 pF	10 V		TO-220-3 Full Pack	11 A	120 mOhm	4 V	Through Hole	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)		PG-TO220-FP		32 W		34 nC
Infineon Technologies IPA60R125CPXKSA1	20 V	650 V	2500 pF	10 V	35 W	TO-220-3 Full Pack	25 A	125 mOhm	3.5 V	Through Hole	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	70 nC	PG-TO220-FP
Infineon Technologies IPA60R120P7XKSA1	20 V	600 V	1544 pF	10 V	28 W	TO-220-3 Full Pack	26 A		4 V	Through Hole	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)		PG-TO220 Full Pack				36 nC	120 mOhm
Infineon Technologies IPA60R450E6XKSA1	20 V	600 V	620 pF	10 V		TO-220-3 Full Pack	9.2 A		3.5 V	Through Hole	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	28 nC	PG-TO220-FP
Infineon Technologies IPA60R330P6XKSA1	20 V	600 V		10 V		TO-220-3 Full Pack	12 A	330 mOhm		Through Hole	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	22 nC	PG-TO220-FP	1010 pF	32 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 3.46
		10	$ 2.03
		50	$ 1.75
		100	$ 1.68
		500	$ 1.52
		1000	$ 1.19
		2000	$ 1.19
Newark	Each	1	$ 3.36
		10	$ 2.75
		100	$ 1.75
		500	$ 1.66
		1000	$ 1.29

Description

General part information

IPA60R Series

CoolMOS™ C6combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.

Documents

Technical documentation and resources

No documents available