IPI45N06S409AKSA1

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Infineon Technologies

MOSFET N-CH 60V 45A TO262-3

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Unknown

Infineon Technologies

MOSFET N-CH 60V 45A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI45N06S409AKSA1

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	3785 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	71 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	9.4 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Grade	Mounting Type	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IPI45N06S4L08AKSA3	I2PAK TO-262-3 Long Leads TO-262AA	45 A	71 W	4780 pF	Automotive	Through Hole	AEC-Q101	64 nC	8.2 mOhm	MOSFET (Metal Oxide)	2.2 V	60 V	4.5 V 10 V	N-Channel	16 V	-55 °C	175 ░C
Infineon Technologies IPI45N06S409AKSA1	I2PAK TO-262-3 Long Leads TO-262AA	45 A	71 W		Automotive	Through Hole	AEC-Q101		9.4 mOhm	MOSFET (Metal Oxide)	4 V	60 V	10 V	N-Channel	20 V	-55 °C	175 ░C	PG-TO262-3	3785 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 45A (Tc) 71W (Tc) Through Hole PG-TO262-3

Technical documentation and resources