MOSFET N-CHANNEL_55/60V
| Part | Package / Case | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Grade | Mounting Type | Qualification | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Technology | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | I2PAK TO-262-3 Long Leads TO-262AA | 45 A | 71 W | 4780 pF | Automotive | Through Hole | AEC-Q101 | 64 nC | 8.2 mOhm | MOSFET (Metal Oxide) | 2.2 V | 60 V | 4.5 V 10 V | N-Channel | 16 V | -55 °C | 175 ░C | ||
Infineon Technologies | I2PAK TO-262-3 Long Leads TO-262AA | 45 A | 71 W | Automotive | Through Hole | AEC-Q101 | 9.4 mOhm | MOSFET (Metal Oxide) | 4 V | 60 V | 10 V | N-Channel | 20 V | -55 °C | 175 ░C | PG-TO262-3 | 3785 pF |