STI24NM60N

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STMicroelectronics

TRANS MOSFET N-CH 650V 17A 3-PIN(3+TAB) I2PAK TUBE

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STI24NM60N

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STMicroelectronics

TRANS MOSFET N-CH 650V 17A 3-PIN(3+TAB) I2PAK TUBE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STI24NM60N

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC
Input Capacitance (Ciss) (Max) @ Vds	1400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	I2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

STI24 Series

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STI24N60M6	-55 °C	150 °C	10 V	Through Hole	600 V	I2PAK TO-262-3 Long Leads TO-262AA	190 mOhm	I2PAK	4.75 V	25 V	MOSFET (Metal Oxide)	17 A	130 W	N-Channel	23 nC
STMicroelectronics STI24NM60N	-55 °C	150 °C	10 V	Through Hole	600 V	I2PAK TO-262-3 Long Leads TO-262AA	190 mOhm	I2PAK	4 V	30 V	MOSFET (Metal Oxide)	17 A	125 W	N-Channel	46 nC	1400 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	50	$ 3.98
		100	$ 3.41
		250	$ 3.22
		500	$ 3.03
		1250	$ 2.60
		2500	$ 2.44

Description

General part information

STI24 Series

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.100% avalanche testedLow input capacitance and gate chargeLow gate input resistance

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Technical documentation and resources