STI24N60M6

Obsolete

STMicroelectronics

MOSFET, N-CH, 600V, TO-262

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Obsolete

STMicroelectronics

MOSFET, N-CH, 600V, TO-262

Technical Specifications

Parameters and characteristics for this part

Specification	STI24N60M6

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	130 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	I2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4.75 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STI24N60M6	-55 °C	150 °C	10 V	Through Hole	600 V	I2PAK TO-262-3 Long Leads TO-262AA	190 mOhm	I2PAK	4.75 V	25 V	MOSFET (Metal Oxide)	17 A	130 W	N-Channel	23 nC
STMicroelectronics STI24NM60N	-55 °C	150 °C	10 V	Through Hole	600 V	I2PAK TO-262-3 Long Leads TO-262AA	190 mOhm	I2PAK	4 V	30 V	MOSFET (Metal Oxide)	17 A	125 W	N-Channel	46 nC	1400 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 17A (Tj) 130W (Tc) Through Hole I2PAK

Technical documentation and resources