DMWSH120H43SM4

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Diodes Inc

1200V N-CHANNEL SILICON CARBIDE POWER MOSFET

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DMWSH120H43SM4

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Diodes Inc

1200V N-CHANNEL SILICON CARBIDE POWER MOSFET

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DocumentsDatasheet Recommended Soldering Techniques

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Technical Specifications

Parameters and characteristics for this part

Specification	DMWSH120H43SM4

Current - Continuous Drain (Id) @ 25°C	72.7 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	105 nC
Input Capacitance (Ciss) (Max) @ Vds	2187 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	341 W
Rds On (Max) @ Id, Vgs [Max]	43 mOhm
Supplier Device Package	TO-247-4
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	19 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	3.6 V

DMWSH120H43SM4 Series

1200V N-Channel Silicon Carbide Power MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max) [Min]	Vgs (Max) [Max]	Package / Case	Power Dissipation (Max)
Diodes Inc DMWSH120H43SM4	-55 °C	175 ░C	3.6 V	1200 V	MOSFET (Metal Oxide)	43 mOhm	72.7 A	15 V	N-Channel	105 nC	TO-247-4	Through Hole	2187 pF	-8 V	19 V	TO-247-4	341 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	30	$ 14.26

Description

General part information

DMWSH120H43SM4 Series

This SiC MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.