DMWSH120H43SM4 Series

1200V N-Channel Silicon Carbide Power MOSFET

Catalog

1200V N-Channel Silicon Carbide Power MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max) [Min]	Vgs (Max) [Max]	Package / Case	Power Dissipation (Max)
Diodes Inc DMWSH120H43SM4	-55 °C	175 ░C	3.6 V	1200 V	MOSFET (Metal Oxide)	43 mOhm	72.7 A	15 V	N-Channel	105 nC	TO-247-4	Through Hole	2187 pF	-8 V	19 V	TO-247-4	341 W

Catalog

1200V N-Channel Silicon Carbide Power MOSFET

Key Features

• Low On-Resistance

• High BVDSSRating for Power Application

• Low Input Capacitance

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This SiC MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.