IXFC60N20

Obsolete

IXYS

MOSFET N-CH 200V 60A ISOPLUS220

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Obsolete

IXYS

MOSFET N-CH 200V 60A ISOPLUS220

Technical Specifications

Parameters and characteristics for this part

Specification	IXFC60N20

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	155 nC
Input Capacitance (Ciss) (Max) @ Vds	5200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	ISOPLUS220™
Power Dissipation (Max) [Max]	230 W
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	ISOPLUS220™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Package / Case	Technology
IXYS IXFC60N20	60 A	155 nC	4 V	20 V	5200 pF	33 mOhm	Through Hole	200 V	ISOPLUS220™	230 W	10 V	-55 °C	150 °C	N-Channel	ISOPLUS220™	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 60A (Tc) 230W (Tc) Through Hole ISOPLUS220™

Technical documentation and resources