MOSFET N-CH 200V 60A ISOPLUS220
| Part | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id [Max] | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Mounting Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Package / Case | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 60 A | 155 nC | 4 V | 20 V | 5200 pF | 33 mOhm | Through Hole | 200 V | ISOPLUS220™ | 230 W | 10 V | -55 °C | 150 °C | N-Channel | ISOPLUS220™ | MOSFET (Metal Oxide) |