AON6926

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 11A/12A 8DFN

Search across all available documentation for this part.

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 11A/12A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	AON6926

Configuration	2 N-Channel (Dual) Asymmetrical
Current - Continuous Drain (Id) @ 25°C	12 A, 11 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	24 nC
Input Capacitance (Ciss) (Max) @ Vds	1380 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max [Max]	2.1 W
Power - Max [Min]	1.9 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	8-DFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Configuration	Drain to Source Voltage (Vdss)	Mounting Type	FET Feature	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Power - Max [Min]	Power - Max [Max]	Rds On (Max) @ Id, Vgs [Max]	Power - Max
Alpha & Omega Semiconductor Inc. AON6926	1380 pF	11 A 12 A	11 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	2 N-Channel (Dual) Asymmetrical	30 V	Surface Mount	Logic Level Gate	8-DFN (5x6)	2.5 V	24 nC	8-PowerVDFN	1.9 W	2.1 W
Alpha & Omega Semiconductor Inc. AON6924	1560 pF	15 A 28 A		-55 °C	150 °C	MOSFET (Metal Oxide)	2 N-Channel (Dual) Asymmetrical	30 V	Surface Mount	Logic Level Gate		2.3 V	21 nC	8-WDFN Exposed Pad			5.2 mOhm	2 W 2.2 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$