DMN2010UDZ-7
ObsoleteDiodes Inc
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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DMN2010UDZ-7
ObsoleteDiodes Inc
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN2010UDZ-7 |
|---|---|
| Configuration | 2 N-Channel (Dual) Common Drain |
| Current - Continuous Drain (Id) @ 25°C | 11 A |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 33.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2665 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-UDFN Exposed Pad |
| Power - Max [Max] | 700 mW |
| Rds On (Max) @ Id, Vgs | 7 mOhm |
| Supplier Device Package | U-DFN2535-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
DMN2010UDZ Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources