DMN2010UDZ Series

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Catalog

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Configuration	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
Diodes Inc DMN2010UDZ-7	33.2 nC	U-DFN2535-6	11 A	700 mW	7 mOhm	2 N-Channel (Dual) Common Drain	6-UDFN Exposed Pad	Surface Mount	2665 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	24 V	1.5 V

Catalog

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Key Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.