AUIRF1324STRL

Obsolete

Infineon Technologies

MOSFET N-CH 24V 195A D2PAK

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Obsolete

Infineon Technologies

MOSFET N-CH 24V 195A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRF1324STRL

Current - Continuous Drain (Id) @ 25°C	195 A
Drain to Source Voltage (Vdss)	24 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	240 nC
Input Capacitance (Ciss) (Max) @ Vds	7590 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	1.65 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Technology	FET Type	Supplier Device Package	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case
Infineon Technologies AUIRF1324STRL	240 nC	-55 °C	175 ░C	195 A	4 V	300 W	MOSFET (Metal Oxide)	N-Channel	D2PAK	20 V	Surface Mount	7590 pF	10 V	1.65 mOhm	24 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Infineon Technologies AUIRF1324STRL	240 nC	-55 °C	175 ░C	195 A	4 V	300 W	MOSFET (Metal Oxide)	N-Channel	D2PAK	20 V	Surface Mount	7590 pF	10 V	1.65 mOhm	24 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 24 V 195A (Tc) 300W (Tc) Surface Mount D2PAK

Technical documentation and resources