MOSFET N-CH 24V 195A D2PAK
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Technology | FET Type | Supplier Device Package | Vgs (Max) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 240 nC | -55 °C | 175 ░C | 195 A | 4 V | 300 W | MOSFET (Metal Oxide) | N-Channel | D2PAK | 20 V | Surface Mount | 7590 pF | 10 V | 1.65 mOhm | 24 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB |
Infineon Technologies | 240 nC | -55 °C | 175 ░C | 195 A | 4 V | 300 W | MOSFET (Metal Oxide) | N-Channel | D2PAK | 20 V | Surface Mount | 7590 pF | 10 V | 1.65 mOhm | 24 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB |