Zenode.ai Logo
Beta
K

IPC302N08N3X1SA1

Active
Infineon Technologies

OPTIMOS™ AND STRONGIRFET™ LOW AND MEDIUM VOLTAGE POWER MOSFET BARE DIES

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

IPC302N08N3X1SA1

Active
Infineon Technologies

OPTIMOS™ AND STRONGIRFET™ LOW AND MEDIUM VOLTAGE POWER MOSFET BARE DIES

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPC302N08N3X1SA1
Current - Continuous Drain (Id) @ 25°C1 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageSawn on foil
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 4425$ 2.76

Description

General part information

IPC302N Series

Infineon’s OptiMOS™ 100V, 120V and 150V families combine very low on-state resistance (RDS(on)) and fastest switching behavior, providing outstanding performance to a wide range of industrial and consumer applications. From high current motor control applications to fast switching DC-DC converters or Class D audio amplifiers, Infineon’s products offer excellent performance, the highest efficiency and minimal space requirements.

Documents

Technical documentation and resources