IPC302N25N3X1SA1

NRND

Infineon Technologies

MOSFET N-CH 250V 1A SAWN ON FOIL

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NRND

Infineon Technologies

MOSFET N-CH 250V 1A SAWN ON FOIL

Technical Specifications

Parameters and characteristics for this part

Specification	IPC302N25N3X1SA1

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Sawn on foil
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Mounting Type	Package / Case	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies IPC302N12N3X1SA1	4 V	120 V	10 V	MOSFET (Metal Oxide)	Surface Mount	Die	Sawn on foil	N-Channel	1 A
Infineon Technologies IPC302N08N3X1SA1	3.5 V	80 V	10 V	MOSFET (Metal Oxide)	Surface Mount	Die	Sawn on foil	N-Channel	1 A
Infineon Technologies IPC302N20N3X1SA1	4 V	200 V	10 V	MOSFET (Metal Oxide)	Surface Mount	Die	Sawn on foil	N-Channel	1 A
Infineon Technologies IPC302N25N3X1SA1	4 V	250 V	10 V	MOSFET (Metal Oxide)	Surface Mount	Die	Sawn on foil	N-Channel	1 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	4425	$ 4.15

General part information

N-Channel 250 V 1A (Tj) Surface Mount Sawn on foil

Technical documentation and resources