
STD95N3LLH6
ObsoleteSTMicroelectronics
MOSFET N-CH 30V 80A DPAK
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STD95N3LLH6
ObsoleteSTMicroelectronics
MOSFET N-CH 30V 80A DPAK
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | STD95N3LLH6 |
|---|---|
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 20 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 70 W |
| Rds On (Max) @ Id, Vgs | 4.2 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
STD95N4LF3 Series
These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance.
Documents
Technical documentation and resources