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STD95N3LLH6 - MFG_DPAK(TO252-3)

STD95N3LLH6

Obsolete
STMicroelectronics

MOSFET N-CH 30V 80A DPAK

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STD95N3LLH6 - MFG_DPAK(TO252-3)

STD95N3LLH6

Obsolete
STMicroelectronics

MOSFET N-CH 30V 80A DPAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD95N3LLH6
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]20 nC
Input Capacitance (Ciss) (Max) @ Vds2200 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)70 W
Rds On (Max) @ Id, Vgs4.2 mOhm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

STD95N4LF3 Series

These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance.

Documents

Technical documentation and resources