STD95N4LF3 Series

N-channel 40 V, 5 mOhm, 80 A STripFET(TM) III Power MOSFET in DPAK package

Catalog

N-channel 40 V, 5 mOhm, 80 A STripFET(TM) III Power MOSFET in DPAK package

Part	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Power Dissipation (Max)
STMicroelectronics STD95N4LF3	110 W	-55 °C	175 ░C	70 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	40 V	2500 pF	MOSFET (Metal Oxide)	6 mOhm	Surface Mount	10 V	5 V	N-Channel	DPAK	2.5 V	16 V
STMicroelectronics STD95N4F3	110 W	-55 °C	175 ░C		DPAK (2 Leads + Tab) SC-63 TO-252-3	40 V	2200 pF	MOSFET (Metal Oxide)	6.5 mOhm	Surface Mount			N-Channel	DPAK	4 V	20 V	54 nC	10 V
STMicroelectronics STD95N3LLH6				20 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 V	2200 pF	MOSFET (Metal Oxide)	4.2 mOhm	Surface Mount			N-Channel	DPAK	2.5 V	20 V		4.5 V 10 V	175 °C	70 W

Catalog

N-channel 40 V, 5 mOhm, 80 A STripFET(TM) III Power MOSFET in DPAK package

Description

These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance.