EPC2218A

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Efficient Power Conversion Corporation

TRANS GAN 80V .0032OHM AECQ101

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Efficient Power Conversion Corporation

TRANS GAN 80V .0032OHM AECQ101

Technical Specifications

Parameters and characteristics for this part

Specification	EPC2218A

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13.6 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1570 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Die
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	3.2 mOhm
Supplier Device Package	Die
Technology	GaNFET (Gallium Nitride)
Vgs (Max) [Max]	6 V
Vgs (Max) [Min]	-4 V
Vgs(th) (Max) @ Id	2.5 V

Part	Supplied Contents	Utilized IC / Part	Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]	Vgs (Max) [Min]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Vgs(th) (Max) @ Id	Qualification	FET Type	Package / Case
Efficient Power Conversion Corporation EPC90135	Board(s)	EPC2218	Power Management
Efficient Power Conversion Corporation EPC2218A				3.2 mOhm	60 A	150 °C	-40 °C	5 V	GaNFET (Gallium Nitride)	Die	80 V	6 V	-4 V	1570 pF	Surface Mount	13.6 nC	Automotive	2.5 V	AEC-Q101	N-Channel	Die

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 80 V 60A (Ta) Surface Mount Die

Technical documentation and resources