DEV BD 1/2BRIDGE PARALEL EPC2218
| Part | Supplied Contents | Utilized IC / Part | Type | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Technology | Supplier Device Package | Drain to Source Voltage (Vdss) | Vgs (Max) [Max] | Vgs (Max) [Min] | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Grade | Vgs(th) (Max) @ Id | Qualification | FET Type | Package / Case | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Efficient Power Conversion Corporation  | Board(s)  | EPC2218  | Power Management  | ||||||||||||||||||
Efficient Power Conversion Corporation  | 3.2 mOhm  | 60 A  | 150 °C  | -40 °C  | 5 V  | GaNFET (Gallium Nitride)  | Die  | 80 V  | 6 V  | -4 V  | 1570 pF  | Surface Mount  | 13.6 nC  | Automotive  | 2.5 V  | AEC-Q101  | N-Channel  | Die  |