IRF300P227

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Infineon Technologies

MOSFET, N-CH, 300V, 50A, 175DEG C, 313W ROHS COMPLIANT: YES

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Infineon Technologies

MOSFET, N-CH, 300V, 50A, 175DEG C, 313W ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	IRF300P227

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	107 nC
Input Capacitance (Ciss) (Max) @ Vds	4893 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	313 W
Rds On (Max) @ Id, Vgs [Max]	40 mOhm
Supplier Device Package	PG-TO247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max) [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	FET Type	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IRF300P226	556 W	MOSFET (Metal Oxide)	-55 °C	175 ░C	100 A	4 V	191 nC	10030 pF	300 V	TO-247AC	20 V	10 V	TO-247-3	19 mΩ	Through Hole	N-Channel
Infineon Technologies IRF300P227	313 W	MOSFET (Metal Oxide)	-55 °C	175 ░C	50 A	4 V	107 nC	4893 pF	300 V	PG-TO247-3	20 V	10 V	TO-247-3		Through Hole	N-Channel	40 mOhm

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