Beta
⌘K
POWER MOSFET, N CHANNEL, 300 V, 100 A, 0.016 OHM, TO-247AC, THROUGH HOLE
| Part | Power Dissipation (Max) [Max] | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Supplier Device Package | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Rds On (Max) @ Id, Vgs | Mounting Type | FET Type | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 556 W | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 100 A | 4 V | 191 nC | 10030 pF | 300 V | TO-247AC | 20 V | 10 V | TO-247-3 | 19 mΩ | Through Hole | N-Channel | |
Infineon Technologies | 313 W | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 50 A | 4 V | 107 nC | 4893 pF | 300 V | PG-TO247-3 | 20 V | 10 V | TO-247-3 | Through Hole | N-Channel | 40 mOhm |