APT45GR65BSCD10

Obsolete

Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

Search across all available documentation for this part.

Obsolete

Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

Technical Specifications

Parameters and characteristics for this part

Specification	APT45GR65BSCD10

Current - Collector (Ic) (Max) [Max]	118 A
Current - Collector Pulsed (Icm)	224 A
Gate Charge	203 nC
IGBT Type	NPT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	543 W
Reverse Recovery Time (trr)	80 ns
Supplier Device Package	TO-247
Td (on/off) @ 25°C	15 ns, 100 ns
Test Condition	433 V, 45 A, 15 V, 4.3 Ohm
Vce(on) (Max) @ Vge, Ic	2.4 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Voltage - Collector Emitter Breakdown (Max)	Td (on/off) @ 25°C	IGBT Type	Vce(on) (Max) @ Vge, Ic	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Test Condition	Mounting Type	Reverse Recovery Time (trr)	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Current - Collector Pulsed (Icm)	Gate Charge
Microsemi Corporation APT45GR65BSCD10	650 V	15 ns 100 ns	NPT	2.4 V	TO-247-3	-55 °C	150 °C	TO-247	4.3 Ohm 15 V 45 A 433 V	Through Hole	80 ns	118 A	543 W	224 A	203 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT NPT 650 V 118 A 543 W Through Hole TO-247

Technical documentation and resources

No documents available