Beta
⌘K
INSULATED GATE BIPOLAR TRANSISTO
| Part | Voltage - Collector Emitter Breakdown (Max) | Td (on/off) @ 25°C | IGBT Type | Vce(on) (Max) @ Vge, Ic | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Test Condition | Mounting Type | Reverse Recovery Time (trr) | Current - Collector (Ic) (Max) [Max] | Power - Max [Max] | Current - Collector Pulsed (Icm) | Gate Charge |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation | 650 V | 15 ns 100 ns | NPT | 2.4 V | TO-247-3 | -55 °C | 150 °C | TO-247 | 4.3 Ohm 15 V 45 A 433 V | Through Hole | 80 ns | 118 A | 543 W | 224 A | 203 nC |