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STP26N60M2 - TO-220-3

STP26N60M2

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STMicroelectronics

N-CHANNEL 600 V, 140 MOHM TYP., 20 A MDMESH M2 POWER MOSFET IN A TO-220 PACKAGE

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STP26N60M2 - TO-220-3

STP26N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 140 MOHM TYP., 20 A MDMESH M2 POWER MOSFET IN A TO-220 PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP26N60M2
Current - Continuous Drain (Id) @ 25°C20 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Mounting TypeThrough Hole
Package / CaseTO-220-3
Power Dissipation (Max)169 W
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1000$ 1.44

Description

General part information

STP26N60DM6 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.