Technical Specifications
Parameters and characteristics for this part
| Specification | STP26N60M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 169 W |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1000 | $ 1.44 | |
Description
General part information
STP26N60DM6 Series
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Documents
Technical documentation and resources
AN4406
Application Notes (5 of 9)AN4742
Application Notes (5 of 9)Flyers (5 of 10)
AN4250
Application Notes (5 of 9)UM1575
User ManualsAN4829
Application Notes (5 of 9)Flyers (5 of 10)
AN2842
Application Notes (5 of 9)AN4720
Application Notes (5 of 9)TN1378
Technical Notes & ArticlesTN1156
Technical Notes & ArticlesDS14659
Product SpecificationsAN2344
Application Notes (5 of 9)Flyers (5 of 10)
Flyers (5 of 10)
Flyers (5 of 10)
AN5318
Application Notes (5 of 9)AN4337
Application Notes (5 of 9)TN1225
Technical Notes & ArticlesFlyers (5 of 10)
Flyers (5 of 10)
TN1224
Technical Notes & ArticlesFlyers (5 of 10)
Flyers (5 of 10)
Flyers (5 of 10)
