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STP26N60DM6 - TO-220-3 Type A

STP26N60DM6

Active
STMicroelectronics

N-CHANNEL 600 V, 165 MOHM TYP., 18 A MDMESH DM6 POWER MOSFET IN A TO-220 PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheetTN1224+24
STP26N60DM6 - TO-220-3 Type A

STP26N60DM6

Active
STMicroelectronics

N-CHANNEL 600 V, 165 MOHM TYP., 18 A MDMESH DM6 POWER MOSFET IN A TO-220 PACKAGE

Deep-Dive with AI

DocumentsDatasheetTN1224+24

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP26N60DM6
Current - Continuous Drain (Id) @ 25°C18 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]24 nC
Input Capacitance (Ciss) (Max) @ Vds940 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)130 W
Rds On (Max) @ Id, Vgs195 mOhm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4.75 V

STP26N60DM6 Series

N-channel 600 V, 165 mOhm typ., 18 A MDmesh DM6 Power MOSFET in a TO-220 package

PartFET TypeMounting TypePackage / CaseSupplier Device PackageVgs (Max)Current - Continuous Drain (Id) @ 25°CPower Dissipation (Max)TechnologyDrive Voltage (Max Rds On, Min Rds On)Drain to Source Voltage (Vdss)Operating Temperature [Min]Operating Temperature [Max]Input Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ Vgs [Max]Vgs(th) (Max) @ IdRds On (Max) @ Id, Vgs
STMicroelectronics
STP26N60M2
N-Channel
Through Hole
TO-220-3
TO-220
25 V
20 A
169 W
MOSFET (Metal Oxide)
10 V
600 V
STMicroelectronics
STP26N60DM6
N-Channel
Through Hole
TO-220-3
TO-220
25 V
18 A
130 W
MOSFET (Metal Oxide)
10 V
600 V
-55 °C
150 °C
940 pF
24 nC
4.75 V
195 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 350$ 2.40
700$ 2.26
1050$ 1.93
2450$ 1.82
NewarkEach 1$ 5.84
10$ 4.22
25$ 3.94
50$ 3.66
100$ 3.38
250$ 3.10
500$ 2.83

Description

General part information

STP26N60DM6 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.