IXTU01N100D

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IXYS

MOSFET N-CH 1000V 400MA TO251

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IXYS

MOSFET N-CH 1000V 400MA TO251

Technical Specifications

Parameters and characteristics for this part

Specification	IXTU01N100D

Current - Continuous Drain (Id) @ 25°C	400 mA
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	0 V
FET Feature	Depletion Mode
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.8 nC
Input Capacitance (Ciss) (Max) @ Vds	100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	1.1 W, 25 W
Rds On (Max) @ Id, Vgs	80 Ohm
Supplier Device Package	TO-251AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Feature
IXYS IXTU01N80	50 Ohm	10 V	800 V	4.5 V	N-Channel	100 mA	TO-251AA	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA	20 V	8 nC	25 W	-55 °C	150 °C	Through Hole	60 pF
IXYS IXTU01N100	80 Ohm	10 V	1000 V	4.5 V	N-Channel	100 mA	TO-251AA	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA	20 V	6.9 nC	25 W	-55 °C	150 °C	Through Hole	54 pF
IXYS IXTU01N100D	80 Ohm	0 V	1000 V	4.5 V	N-Channel	400 mA	TO-251AA	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA	20 V	5.8 nC	1.1 W 25 W	-55 °C	150 °C	Through Hole	100 pF	Depletion Mode

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General part information

N-Channel 1000 V 400mA (Tc) 1.1W (Ta), 25W (Tc) Through Hole TO-251AA

Technical documentation and resources

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