MOSFET N-CH 800V 100MA TO251
| Part | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | FET Type | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Technology | Package / Case | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 50 Ohm | 10 V | 800 V | 4.5 V | N-Channel | 100 mA | TO-251AA | MOSFET (Metal Oxide) | IPAK TO-251-3 Short Leads TO-251AA | 20 V | 8 nC | 25 W | -55 °C | 150 °C | Through Hole | 60 pF | |
IXYS | 80 Ohm | 10 V | 1000 V | 4.5 V | N-Channel | 100 mA | TO-251AA | MOSFET (Metal Oxide) | IPAK TO-251-3 Short Leads TO-251AA | 20 V | 6.9 nC | 25 W | -55 °C | 150 °C | Through Hole | 54 pF | |
IXYS | 80 Ohm | 0 V | 1000 V | 4.5 V | N-Channel | 400 mA | TO-251AA | MOSFET (Metal Oxide) | IPAK TO-251-3 Short Leads TO-251AA | 20 V | 5.8 nC | 1.1 W 25 W | -55 °C | 150 °C | Through Hole | 100 pF | Depletion Mode |