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IR21531STRPBF - IR21271STRPBF

IR21531STRPBF

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Infineon Technologies

THE IR21531S IS A HALF BRIDGE DRIVER, LO IN PHASE WITH RT, PROGRAMMABLE OSCILLATING FREQUENCY, 0.6ΜS DEADTIME (8-LEAD SOIC PACKAGE)

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IR21531STRPBF - IR21271STRPBF

IR21531STRPBF

Active
Infineon Technologies

THE IR21531S IS A HALF BRIDGE DRIVER, LO IN PHASE WITH RT, PROGRAMMABLE OSCILLATING FREQUENCY, 0.6ΜS DEADTIME (8-LEAD SOIC PACKAGE)

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Technical Specifications

Parameters and characteristics for this part

SpecificationIR21531STRPBF
Channel TypeSynchronous
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET
High Side Voltage - Max (Bootstrap) [Max]600 V
Input TypeRC Input Circuit
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 ¯C
Operating Temperature [Min]-40 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Rise / Fall Time (Typ) [custom]45 ns
Rise / Fall Time (Typ) [custom]80 ns
Supplier Device Package8-SOIC
Voltage - Supply [Max]15.6 V
Voltage - Supply [Min]10 VDC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.86
10$ 1.85
25$ 1.59
100$ 1.29
250$ 1.15
500$ 1.06
1000$ 0.99
Digi-Reel® 1$ 2.86
10$ 1.85
25$ 1.59
100$ 1.29
250$ 1.15
500$ 1.06
1000$ 0.99
Tape & Reel (TR) 2500$ 0.91
5000$ 0.86
7500$ 0.84

Description

General part information

IR21531 Series

IR21531STRPBF is a self-oscillating half-bridge gate driver. It incorporates a high-voltage half-bridge gate driver with a front-end oscillator similar to the industry standard CMOS 555 timer. The IR21531 provides more functionality and is easier to use than the previous IC. A shutdown feature has been designed into the CT pin so that both gate driver outputs can be disabled using a low-voltage control signal. In addition, the gate driver output pulse width is the same once the rising undervoltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate driver, and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been paid to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.

Documents

Technical documentation and resources