IC GATE DRVR HALF-BRIDGE 8SOIC
| Part | Input Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Package / Case | Package / Case [y] | Package / Case [x] | Supplier Device Package | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Gate Type | High Side Voltage - Max (Bootstrap) [Max] | Driven Configuration | Number of Drivers | Operating Temperature [Min] | Operating Temperature [Max] | Channel Type | Mounting Type | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | RC Input Circuit | 15.6 V | 10 VDC | 8-SOIC | 3.9 mm | 0.154 in | 8-SOIC | 45 ns | 80 ns | N-Channel MOSFET | 600 V | Half-Bridge | 2 | -40 °C | 125 ¯C | Synchronous | Surface Mount | ||
Infineon Technologies | RC Input Circuit | 15.6 V | 10 VDC | 8-SOIC | 3.9 mm | 0.154 in | 8-SOIC | 45 ns | 80 ns | N-Channel MOSFET | 600 V | Half-Bridge | 2 | -40 °C | 125 ¯C | Synchronous | Surface Mount | ||
Infineon Technologies | RC Input Circuit | 15.6 V | 10 VDC | 8-DIP | 8-PDIP | 45 ns | 80 ns | MOSFET (N-Channel) N-Channel MOSFET | 600 V | Half-Bridge | 2 | -40 °C | 125 ¯C | Synchronous | Through Hole | 0.3 in | 7.62 mm | ||
Infineon Technologies | RC Input Circuit | 15.6 V | 10 VDC | 8-SOIC | 3.9 mm | 0.154 in | 8-SOIC | 45 ns | 80 ns | N-Channel MOSFET | 600 V | Half-Bridge | 2 | -40 °C | 125 ¯C | Synchronous | Surface Mount | ||
Infineon Technologies | RC Input Circuit | 15.6 V | 10 VDC | 8-DIP | 8-PDIP | 45 ns | 80 ns | N-Channel MOSFET | 600 V | Half-Bridge | 2 | -40 °C | 125 ¯C | Synchronous | Through Hole | 0.3 in | 7.62 mm | ||
Infineon Technologies | RC Input Circuit | 15.6 V | 10 VDC | 8-SOIC | 3.9 mm | 0.154 in | 8-SOIC | 45 ns | 80 ns | N-Channel MOSFET | 600 V | Half-Bridge | 2 | -40 °C | 125 ¯C | Synchronous | Surface Mount | ||
Infineon Technologies | RC Input Circuit | 15.6 V | 10 VDC | 8-DIP | 8-PDIP | 45 ns | 80 ns | N-Channel MOSFET | 600 V | Half-Bridge | 2 | -40 °C | 125 ¯C | Synchronous | Through Hole | 0.3 in | 7.62 mm |