Specification	SCS240KE2C

Current - Average Rectified (Io) (per Diode)	20 A
Current - Reverse Leakage	400 µA
Diode Configuration	Common Cathode
Diode Pair Count	1 pair
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	175 °C
Package / Case	TO-247-3
Package Name	TO-247
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V

SCS240 Series

650V, 40A, 3-pin THD, Silicon-carbide (SiC) SBD for Automotive

Part	Diode Pair Count	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Current - Reverse Leakage	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max)	Mounting Type	Package / Case	Technology	Operating Temperature - Junction (Max)	Package Name	Voltage - DC Reverse (Vr) (Max)	Operating Temperature - Junction	Qualification	Grade
Rohm Semiconductor SCS240KE2HRC11	1 pair	Common Cathode	20 A	500 mA	No Recovery Time	500 mA 500 mA	400 µA	0 ns	1.6 V	Through Hole	TO-247-3	SiC (Silicon Carbide) Schottky	175 °C	TO-247	1200 V
Rohm Semiconductor SCS240KE2GC11	1 pair	Common Cathode	20 A	500 mA	No Recovery Time	500 mA 500 mA	400 µA	0 ns	1.6 V	Through Hole	TO-247-3	SiC (Silicon Carbide) Schottky		TO-247N	1200 V	175 °C
Rohm Semiconductor SCS240AE2HRC11	1 pair	Common Cathode	20 A	500 mA	No Recovery Time	500 mA 500 mA	400 µA	0 ns	1.55 V	Through Hole	TO-247-3	SiC (Silicon Carbide) Schottky		TO-247N	650 V	175 °C
Rohm Semiconductor SCS240AE2GC11	1 pair	Common Cathode	20 A	500 mA	No Recovery Time	500 mA 500 mA	400 µA	0 ns	1.55 V	Through Hole	TO-247-3	SiC (Silicon Carbide) Schottky		TO-247N	650 V	175 °C
Rohm Semiconductor SCS240AE2HRC	1 pair	Common Cathode	15 A	500 mA	No Recovery Time	500 mA 500 mA	300 µA		1.55 V	Through Hole	TO-247-3	SiC (Silicon Carbide) Schottky	175 °C	TO-247	650 V		AEC-Q101	Automotive
Rohm Semiconductor SCS240KE2C	1 pair	Common Cathode	20 A	500 mA	No Recovery Time	500 mA 500 mA	400 µA	0 ns		Through Hole	TO-247-3	SiC (Silicon Carbide) Schottky	175 °C	TO-247	1200 V

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