SCS240AE2HRC11
ActiveRohm Semiconductor
SILICON CARBIDE SCHOTTKY DIODE, DUAL COMMON CATHODE, 650 V, 40 A, 31 NC, TO-247
SCS240AE2HRC11
ActiveRohm Semiconductor
SILICON CARBIDE SCHOTTKY DIODE, DUAL COMMON CATHODE, 650 V, 40 A, 31 NC, TO-247
Description
General part information
SCS240 Series
Switching loss reduced, enabling high-speed switching . (2-pin package)
Technical Specifications
Parameters and characteristics for this part
| Specification | SCS240AE2HRC11 |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 20 A |
| Current - Reverse Leakage | 400 µA |
| Diode Configuration | Common Cathode |
| Diode Pair Count | 1 pair |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 175 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247N |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.55 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
Application Note EN
How to Create Symbols for PSpice Models
Oscillation countermeasures for MOSFETs in parallel
Notes for Temperature Measurement Using Thermocouples
Precautions When Measuring the Rear of the Package with a Thermocouple
About Flammability of Materials
Judgment Criteria of Thermal Evaluation
Precautions for Thermal Resistance of Insulation Sheet
Diode Types and Applications
Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs
Impedance Characteristics of Bypass Capacitor
PCB Layout Thermal Design Guide
What is a Thermal Model? (SiC Power Device)
How to Use the Thermal Resistance and Thermal Characteristics Parameters
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Notes for Calculating Power Consumption:Static Operation
θ<sub>JA</sub> and Ψ<sub>JT</sub>
Method for Monitoring Switching Waveform
ESD Data
Anti-Whisker formation
How to Suppress the Parallel Drive Oscillation in SiC Modules
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
Explanation for Marking - TO-247N SiC_Marking-e.pdf
Basics of Thermal Resistance and Heat Dissipation
How to Use LTspice® Models
Calculation of Power Dissipation in Switching Circuit
Reliability Test Result
How to Use Thermal Models
Importance of Probe Calibration When Measuring Power: Deskew
Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials
Inner Structure
About Export Administration Regulations (EAR)
Two-Resistor Model for Thermal Simulation
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
Part Explanation
How to Use LTspice® Models: Tips for Improving Convergence
What Is Thermal Design
Condition of Soldering
How to measure the oscillation occurs between parallel-connected devices
θ<sub>JC</sub> and Ψ<sub>JT</sub>
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
Taping Information
Compliance of the ELV directive
Application Note for SiC Power Devices and Modules
4 Steps for Successful Thermal Designing of Power Devices
Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules
Measurement Method and Usage of Thermal Resistance RthJC
Package Dimensions
