IPC218N06N3X1SA2

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Infineon Technologies

OPTIMOS™ AND STRONGIRFET™ LOW AND MEDIUM VOLTAGE POWER MOSFET BARE DIES

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IPC218N06N3X1SA2

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Infineon Technologies

OPTIMOS™ AND STRONGIRFET™ LOW AND MEDIUM VOLTAGE POWER MOSFET BARE DIES

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPC218N06N3X1SA2

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Sawn on foil
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

IPC218N Series

Part	Drain to Source Voltage (Vdss)	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
Infineon Technologies IPC218N06N3X1SA2	60 V	N-Channel	MOSFET (Metal Oxide)	3 A	Surface Mount	Sawn on foil	10 V	Die	4 V
Infineon Technologies IPC218N04N3X1SA1	40 V	N-Channel	MOSFET (Metal Oxide)	2 A	Surface Mount	Sawn on foil	10 V	Die	4 V	50 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	6195	$ 2.57

Description

General part information

IPC218N Series

New OptiMOS™ 40V and 60V, Infineon’s latest generation of power MOSFETs, is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, telecom, solar micro inverter and fast switching DC-DC converter.

Documents

Technical documentation and resources