IPC218N04N3X1SA1
NRNDOPTIMOS™ AND STRONGIRFET™ LOW AND MEDIUM VOLTAGE POWER MOSFET BARE DIES
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IPC218N04N3X1SA1
NRNDOPTIMOS™ AND STRONGIRFET™ LOW AND MEDIUM VOLTAGE POWER MOSFET BARE DIES
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPC218N04N3X1SA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Rds On (Max) @ Id, Vgs | 50 mOhm |
| Supplier Device Package | Sawn on foil |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 6195 | $ 2.02 | |
Description
General part information
IPC218N Series
New OptiMOS™ 40V and 60V, Infineon’s latest generation of power MOSFETs, is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, telecom, solar micro inverter and fast switching DC-DC converter.
Documents
Technical documentation and resources