IPB65R600C6ATMA1
ObsoleteInfineon Technologies
MOSFET N-CH 650V 7.3A D2PAK
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IPB65R600C6ATMA1
ObsoleteInfineon Technologies
MOSFET N-CH 650V 7.3A D2PAK
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB65R600C6ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7.3 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 63 W |
| Rds On (Max) @ Id, Vgs | 600 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
IPB65R Series
| Part | Technology | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | FET Type | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Rds On (Max) @ Id, Vgs | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | 128 W | 650 V | 24 A | N-Channel | 20 V | -55 °C | 150 °C | 45 nC | 10 V | 4 V | 2140 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 95 mOhm | Surface Mount | ||||
Infineon Technologies | MOSFET (Metal Oxide) | 101 W | 650 V | 18 A | N-Channel | 20 V | -55 °C | 150 °C | 35 nC | 10 V | 4 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 125 mOhm | Surface Mount | 1670 pF | ||||
Infineon Technologies | MOSFET (Metal Oxide) | 62.5 W | 650 V | 6 A | N-Channel | 20 V | -55 °C | 150 °C | 22 nC | 10 V | 4.5 V | 615 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 660 mOhm | Surface Mount | ||||
Infineon Technologies | MOSFET (Metal Oxide) | 72 W | 650 V | 13 A | N-Channel | 20 V | -55 °C | 150 °C | 10 V | 4 V | 1150 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 190 mOhm | Surface Mount | 23 nC | ||||
Infineon Technologies | MOSFET (Metal Oxide) | 650 V | 13.8 A | N-Channel | 20 V | -55 °C | 150 °C | 45 nC | 10 V | 3.5 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 280 mOhm | Surface Mount | 950 pF | 104 W | ||||
Infineon Technologies | MOSFET (Metal Oxide) | 650 V | 11 A | N-Channel | 20 V | -55 °C | 150 °C | 10 V | 4 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 225 mOhm | Surface Mount | 996 pF | 63 W | 20 nC | ||||
Infineon Technologies | MOSFET (Metal Oxide) | 650 V | 7.3 A | N-Channel | 20 V | -55 °C | 150 °C | 10 V | 3.5 V | 440 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 600 mOhm | Surface Mount | 23 nC | 63 W | ||||
Infineon Technologies | MOSFET (Metal Oxide) | 650 V | 25 A | N-Channel | 20 V | -55 °C | 150 °C | 10 V | 4.5 V | 2513 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 90 mOhm | Surface Mount | 53 nC | 127 W |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IPB65R Series
N-Channel 650 V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO263-3
Documents
Technical documentation and resources
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